EUV Resist Requirements: Absorbance and Acid YieldGRONHEID, Roel; FONSECA, Carlos; LEESON, Michael J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7273, issn 0277-786X, isbn 978-0-8194-7526-8 0-8194-7526-2, 727332.1-727332.8, 2Conference Paper

EUV SECONDARY ELECTRON BLUR AT THE 22NM HALF PITCH NODEGRONHEID, Roel; YOUNKIN, Todd R; LEESON, Michael J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7969, issn 0277-786X, isbn 978-0-8194-8528-1, 796904.1-796904.11, 2Conference Paper

Electron Beam Induced Freezing of Positive Tone, EUV Resists for Directed Self Assembly ApplicationsCHENG, Han-Hao; KEEN, Imelda; ANGUANG YU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7970, issn 0277-786X, isbn 978-0-8194-8529-8, 79701V.1-79701V.9Conference Paper

Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithographySAEKI, Akinori; KOZAWA, Takahiro; TAGAWA, Seiichi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69230S.1-69230S.6, issn 0277-786X, isbn 978-0-8194-7108-6Conference Paper

Effect of photoacid generator concentration and developer strength on the patterning capabilities of a model EUV photoresistCHOI, Kwang-Woo; PRABHU, Vivek M; LAVEY, Kristopher A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 651943.1-651943.9, issn 0277-786X, isbn 978-0-8194-6638-9Conference Paper

Electron-Beam-Induced Freezing of an Aromatic-Based EUV Resist: A Robust Template for Directed Self-Assembly of Block CopolymersCHENG, Han-Hao; ANGUANG YU; KEEN, Imelda et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 6, pp 1140-1147, issn 1536-125X, 8 p.Article

EUVL Dark-field Exposure Impact on CDs using Thick and Thin Absorber MasksLEE, Sang H; YOUNKIN, Todd R; LEESON, Michael J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7969, issn 0277-786X, isbn 978-0-8194-8528-1, 79691R.1-79691R.11, 2Conference Paper

Synthesis and reactivity of 3-diazo-4-oxocoumarins for photolithographic applicationsLEESON, Michael J; YUEH, Wang; TATTERSALL, Peter I et al.Chemistry of materials. 2004, Vol 16, Num 9, pp 1763-1769, issn 0897-4756, 7 p.Article

Behavior of Lamellar Forming Block Copolymers under Nanoconfinement: Implications for Topography Directed Self-Assembly of Sub-10 nm StructuresKEEN, Imelda; CHENG, Han-Hao; ANGUANG YU et al.Macromolecules (Print). 2014, Vol 47, Num 1, pp 276-283, issn 0024-9297, 8 p.Article

Component segregation in model chemically amplified resistsWOODWARD, John T; FEDYNYSHYN, Theodore H; ASTOLFI, David K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 651915.1-651915.8, issn 0277-786X, isbn 978-0-8194-6638-9Conference Paper

Fundamentals of the reaction-diffusion process in model EUV photoresistsLAVERY, Kristopher A; CHOI, Kwang-Woo; HAI DENG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6196-2, 2Vol, Part 1, 615313.1-615313.8Conference Paper

EUV mask process development and integrationGUOJING ZHANG; YAN, Pei-Yang; FARNSWORTH, Jeff et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6358-2, vol 1, 62830G.1-62830G.10Conference Paper